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| (R) SMBYW04-200 BYW4200B HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) Tj (max) 4A 200 V 0.85 V 150 C 4 3 2 4 (TAB) FEATURES AND BENEFITS SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY DESCRIPTION Single chip rectifier suited to Switch Mode Power Supplies and high frequency converters. Packaged in DPAK and SMC, this surface mount device is intended for use in low voltage, high frequency inverters, free wheeling and rectification applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current = 0.5 Surge non repetitive forward current Storage temperature range Maximum operating junction temperature DPAK SMC Tcase = 130C Tlead = 70C tp = 10 ms sinusoidal Value 200 10 4 70 - 65 to + 150 150 Unit V A A A C C 2 1(nc) 3 DPAK BYW4200B SMC (JEDEC DO-214AB) SMBYW04-200 October 1999 - Ed: 4C 1/6 SMBYW04-200 / BYW4200B THERMAL RESISTANCE Symbol Rth (j-c) Rth (j-l) Parameter Junction to case Junction to leads Package DPAK SMC Value 5 20 Unit C/W C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Tests Conditions Reverse leakage current Forward voltage drop * tp = 5 ms, < 2 % ** tp = 380 s, < 2% Tests Conditions Tj = 25C Tj = 100C Tj = 25C Tj = 100C IF = 12 A IF = 4 A VR = VRRM Min. Typ. 0.15 0.8 Max. 10 0.5 1.25 0.85 Unit A mA V Pulse test : To evaluate the maximum conduction losses use the following equation : P = 0.7 x IF(AV) + 0.037 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr tfr VFP Tj = 25C Tj = 25C Tj = 25C Test Conditions IF = 1A VF = 30V IF = 4A VFR = 1.1 x VF max IF = 4A dIF/dt = -50 A/s dIF/dt = -50 A/s dIF/dt = -50 A/s Min. Typ. 26 20 5 Max. 35 Unit ns ns V Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 = 0.05 = 0.1 = 0.2 = 0.5 =1 Fig. 2: Peak current versus form factor. IM(A) 20 18 16 14 12 10 8 6 P=1.0W 4 P=1.5W 2 0 0.0 0.1 0.2 T =tp/T P=2.0W tp P=2.5W T IF(av) (A) 1.5 2.0 2.5 3.0 3.5 =tp/T tp 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 4.0 4.5 5.0 2/6 SMBYW04-200 / BYW4200B Fig. 3: Average forward current versus ambient temperature (=0.5). 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 IF(av)(A) SMC Rth(j-a)=Rth(j-l) DPAK Rth(j-a)=Rth(j-c) Fig. 4: Forward voltage drop versus forward current (maximum values). 70.0 IFM(A) Tj=100C (Typical values) 10.0 Tj=100C Rth(j-a)=75C/W Tj=25C 1.0 T =tp/T tp Tamb(C) 50 75 100 125 150 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (SMBYW04-200). 12 10 8 Ta=25C Fig. 5-2: Non repetitive surge peak forward current versus overload duration (BYW4200B). IM(A) 50 45 40 35 30 25 20 15 10 IM 5 0 1E-3 IM(A) Tc=125C 6 4 2 1E-3 IM t Ta=50C Tc=75C t =0.5 t(s) =0.5 t(s) 1E-2 1E-1 1E+0 1E-2 1E-1 1E+0 Fig. 6-1: Variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, epoxy FR4, e(Cu)=35m) (SMBYW04-200). Zth(j-a)/Rth(j-a) 1.00 = 0.5 = 0.2 Fig. 6-2: Variation of thermal impedance junction to case versus pulse duration (BYW4200B). 1.0 Zth(j-c)/Rth(j-c) = 0.5 0.5 = 0.2 0.10 = 0.1 Single pulse = 0.1 T 0.2 Single pulse T tp(s) 0.01 1E-2 1E-1 1E+0 1E+1 =tp/T tp tp(s) 0.1 1E-3 1E-2 1E-1 =tp/T tp 1E+2 5E+2 1E+0 3/6 SMBYW04-200 / BYW4200B Fig. 7: Reverse recovery current versus dIF/dt. IRM(A) IF=IF(av) 90% confidence Fig. 8: Reverse recovery time versus dIF/dt. trr(ns) IF=IF(av) 90% confidence 2.5 2.0 1.5 1.0 Tj=100C Tj=25C 0.5 dIF/dt(A/s) 0.0 1 10 100 100 90 80 70 60 50 40 30 20 10 0 Tj=100C Tj=25C dIF/dt(A/s) 1 10 100 Fig. 9: Junction capacitance versus reverse voltage applied (typical values). 100 C(pF) F=1MHz Tj=25C Fig. 10: Dynamic parameters versus junction temperature. % 250 IF=4A dIF/dt=50A/s VR=30V Qrr 50 200 IRM 20 VR(V) 10 1 10 100 200 150 trr 100 25 Tj(C) 50 75 100 125 150 Fig. 11-1: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35mm) (SMBYW04-200). Rth(j-a) (C/W) 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 Fig. 11-2: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35mm) (BYW4200B). 100 90 80 70 60 50 40 30 20 10 0 Rth(j-a) (C/W) S(Cu) (cm) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 S(Cu) (cm) 0 2 4 6 8 10 12 14 16 18 20 4/6 SMBYW04-200 / BYW4200B PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Millimeters Min. Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0 8 Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0 8 FOOT PRINT (in millimeters) 6.7 6.7 3 3 1.6 2.3 2.3 1.6 5/6 SMBYW04-200 / BYW4200B PACKAGE MECHANICAL DATA SMC DIMENSIONS E1 REF. D Millimeters Min. Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 E A1 C L A2 E2 b A1 A2 b c E E1 E2 D L FOOT PRINT (in millimeters) 3.3 2.0 4.2 2.0 Ordering code Marking Package SMC DPAK DPAK Weight 0.243g 0.30g 0.30g Base qty 2500 75 2500 Delivery mode Tape and reel Tube Tape and reel SMBYW04-200 D20 BYW4200B W4200 BYW4200B-RL W4200 Epoxy meets UL 94,V0 Band indicates cathode Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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